EXAFS MEASUREMENTS FOR LIQUID AS2SE3 AT HIGH-TEMPERATURES AND PRESSURES

被引：33
|
作者：
TAMURA, K
HOSOKAWA, S
INUI, M
YAO, M
ENDO, H
HOSHINO, H
机构：
[1] HIROSAKI UNIV,FAC EDUC,HIROSAKI,AOMORI 036,JAPAN
[2] KYOTO UNIV,FAC SCI,DEPT PHYS,KYOTO 606,JAPAN
[3] KYUSHU UNIV,COLL GEN EDUC,FUKUOKA 810,JAPAN
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 150卷 / 1-3期
关键词：
D O I：
10.1016/0022-3093(92)90151-9
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Extended X-ray absorption fine structure (EXAFS) spectra from liquid As2Se3 around both the As and Se K-edges in the temperature-pressure range up to 1400-degrees-C and about 60 bar were measured. For the EXAFS measurements, a new type of high pressure vessel and a sample cell of own design made of polycrystalline sapphire were developed. Distinct EXAFS oscillations were obtained even at 1400-degrees-C. When the semiconductor-to-metal transition occurs at about 1000-degrees-C, the local environment around a central As atom is substantially changed and a new As neighbor site is induced.
引用
收藏
页码：351 / 355
页数：5
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