ROLE OF THE SURFACE CONDITION IN THE MECHANISM OF MACROPORE NUCLEATION AND GROWTH DURING ELECTROCHEMICAL FORMATION OF THE POROUS LAYER ON N-TYPE SILICON IN CONCENTRATED HYDROFLUORIC-ACID IN THE DARK

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作者：

IZIDINOV, SO

BLOKHINA, AP

ISMAILOVA, LA

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SOVIET ELECTROCHEMISTRY | 1987年 / 23卷 / 12期

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O646 [电化学、电解、磁化学];

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081704 ;

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页码：1499 / 1505

页数：7

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[1] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF THE POROUS SURFACE-LAYER ON SILICON IN HYDROFLUORIC-ACID - FEATURES OF THE ELECTROCHEMICAL-BEHAVIOR OF N-TYPE AND P-TYPE SILICON UNDER CONDITIONS FOR THE FORMATION OF A POROUS LAYER
IZIDINOV, SO
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MARTYNOVA, TS
SOVIET ELECTROCHEMISTRY, 1985, 21 (09): : 1099 - 1106
[2] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - SPECIFIC KINETIC FEATURES OF POROUS-LAYER FORMATION ON N-TYPE AND P-TYPE SILICON
IZIDINOV, SO
BLOKHINA, AP
MARTYNOVA, TS
SOVIET ELECTROCHEMISTRY, 1986, 22 (12): : 1494 - 1500
[3] EFFECT OF HYDROFLUORIC-ACID CONCENTRATION ON THE STRUCTURE AND KINETICS OF ELECTROCHEMICAL FORMATION OF THE POROUS LAYER ON N-TYPE SILICON UNDER STEADY ILLUMINATION
IZIDINOV, SO
BLOKHINA, AP
ISMAILOVA, LA
SOVIET ELECTROCHEMISTRY, 1987, 23 (11): : 1445 - 1452
[4] Anomalously high photovoltaic activity of polished n-type silicon during anodic porous layer formation in hydrofluoric-acid solutions
Izidinov, S.O.
Blokhina, A.P.
Ismailova, L.A.
Soviet electrochemistry, 1988, 23 (11): : 1452 - 1457
[5] ANOMALOUSLY HIGH PHOTOVOLTAIC ACTIVITY OF POLISHED N-TYPE SILICON DURING ANODIC POROUS-LAYER FORMATION IN HYDROFLUORIC-ACID SOLUTIONS
IZIDINOV, SO
BLOKHINA, AP
ISMAILOVA, LA
SOVIET ELECTROCHEMISTRY, 1987, 23 (11): : 1452 - 1457
[6] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE LAYERS ON SILICON IN HYDROFLUORIC ACID. PHOTOELECTROCHEMICAL BEHAVIOR OF n-TYPE SILICON DURING ANODIC FORMATION OF THE POROUS LAYERS.
Izidinov, S.O.
Blokhina, A.P.
Martynova, T.S.
Soviet electrochemistry, 1986, 23 (03): : 313 - 319
[7] KINETICS AND MECHANISM OF ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - INFLUENCE OF ILLUMINATION ON THE KINETICS AND MECHANISM OF ANODIC POROUS-LAYER FORMATION ON NORMAL-TYPE SILICON
IZIDINOV, SO
BLOKHINA, AP
MARTYNOVA, TS
SOVIET ELECTROCHEMISTRY, 1987, 23 (01): : 66 - 70
[8] THE KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - PHOTOELECTROCHEMICAL BEHAVIOR OF NORMAL-TYPE SILICON DURING ANODIC FORMATION OF THE POROUS LAYERS
IZIDINOV, SO
BLOKHINA, AP
MARTYNOVA, TS
SOVIET ELECTROCHEMISTRY, 1986, 22 (03): : 313 - 319
[9] Effect of hydrofluoric acid concentration on the structure and kinetics of electrochemical formation of the porous layer on n-type silicon under steady illumination
Izidinov, S.O.
Blokhina, A.P.
Ismailova, L.A.
Soviet electrochemistry, 1988, 23 (11): : 1445 - 1452
[10] KINETICS AND MECHANISM OF THE ELECTROCHEMICAL FORMATION OF POROUS SURFACE-LAYERS ON SILICON IN HYDROFLUORIC-ACID - KINETIC FEATURES OF POROUS-LAYER GROWTH AND OF THE ANODIC-DISSOLUTION OF NORMAL-TYPE SILICON UNDER GALVANOSTATIC POLARIZATION
IZIDINOV, SO
BLOKHINA, AP
MARTYNOVA, TS
SOVIET ELECTROCHEMISTRY, 1986, 22 (01): : 12 - 18