ORDERING IN INGAAS/INALAS LAYERS

被引：7

作者：

ZAKHAROV, ND ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

SWIDER, W ^{[1
]}

WASHBURN, J ^{[1
]}

BROWN, AS ^{[1
]}

METZGER, R ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 12期

关键词：

LT INGAAS; LT INALAS; ORDERING; TRANSMISSION ELECTRON MICROSCOPY;

D O I：

10.1007/BF02650006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structure of InGaAs/InAlAs layers lattice matched to an InP substrate, grown on either (100) or on (11O) with a 4 degrees tilt toward [11 $$($) over bar 1] at 500 and 300 degrees C has been investigated by transmission electron microscopy. High perfection resulted for the layers grown on [001] oriented substrates whereas growth on the near [110] substrates resulted in compositional nonuniformities, macrosteps formation, and ordering of the group III elements. This difference in structural perfection between the two sets of samples was also reflected in differences in electrical properties.

引用

页码：1495 / 1498

页数：4

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