LATTICE ABSORPTION BANDS IN SILICON

被引：167

作者：

JOHNSON, FA

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1959年 / 73卷 / 470期

关键词：

D O I：

10.1088/0370-1328/73/2/315

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：265 / 272

页数：8

共 9 条

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[4]

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[5]

HILL RW, 1952, PHILOS MAG, V43, P309

[6] INFRARED LATTICE ABSORPTION IN IONIC AND HOMOPOLAR CRYSTALS [J].

LAX, M ;

BURSTEIN, E .

PHYSICAL REVIEW, 1955, 97 (01) :39-52

[7] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].

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ROBERTS, V .

PHYSICAL REVIEW, 1958, 111 (05) :1245-1254

ROBERTS, V .

JOURNAL OF SCIENTIFIC INSTRUMENTS, 1954, 31 (07) :251-252

[9]

ROBERTS V, J SCI INSTRUMENTS