REDUCTION OF DISLOCATION DENSITY IN HETEROEPITAXIAL MBE AND RTCVD GEXSI1-X GROWN ON PATTERNED SI SUBSTRATES

被引：0
|
作者：
FITZGERALD, EA [1 ]
XIE, YH [1 ]
BRASEN, D [1 ]
GREEN, ML [1 ]
MICHEL, J [1 ]
WEIR, BE [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：53 / 53
页数：1
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