PHOTOEMISSION STUDIES OF 2P CORE LEVELS OF PURE AND HEAVILY DOPED SILICON

被引：88

作者：

EBERHARDT, W

KALKOFFEN, G

KUNZ, C

ASPNES, D

CARDONA, M

机构：

[1] DESY, NOTKESTR 85, D-2000 HAMBURG 52, GERMANY

[2] MAX PLANCK INST FESTKORPERFORSCH, HEISENBERGSTR 1, D-7000 STUTTGART 80, GERMANY

[3] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1978年 / 88卷 / 01期

关键词：

D O I：

10.1002/pssb.2220880115

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：135 / 143

页数：9

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