EFFICIENT SINGLE-HETEROJUNCTION AL0.27GA0.73AS/GAAS P-I-N PHOTODIODES WITH 22-GHZ BANDWIDTHS

被引：3

作者：

JOHNSEN, C

SLOAN, S

BRAUN, D

RUSSELL, JL

ZURAKOWSKI, M

LIGHTNER, M

KELLERT, F

PATTERSON, G

KOO, R

DERICKSON, D

BOWERS, J

机构：

[1] HEWLETT PACKARD CO,DIV SIGNAL ANAL,ROHNERT PK,CA 94928

[2] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 08期

关键词：

D O I：

10.1109/16.119043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the design, fabrication, testing, and modeling of single-heterojunction Al0.27Ga0.73As/GaAs p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-mu-m2 mesa structures. At 5-V reverse bias and 850 nm, we typically measure 100 fF of capacitance, 90 pA of leakage current, 73% external quantum efficiency, < 2% reflectivity, and 22-GHz bandwidths.

引用

页码：1968 / 1970

页数：3

共 23 条

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[5] MAGNETOTRANSPORT AND ELECTRIC SUBBAND STUDIES OF SI-DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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