LONG-LIVED PHOTOEXCITED ELECTRON-HOLE PAIRS IN MODULATION-DOPED GAAS/ALGAAS QUANTUM-WELLS STUDIED BY INTERSUBBAND SPECTROSCOPY

被引：0
|
作者：
GARINI, Y
EHRENFREUND, E
COHEN, E
RON, A
LAW, KK
MERZ, JL
GOSSARD, AC
机构：
[1] UNIV CALIF SANTA BARBARA,QUEST,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106
[2] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,DEPT CHEM,IL-32000 HAIFA,ISRAEL
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0038-1101(94)90388-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a study of the e1-e2 intersubband absorption in modulation doped GaAs/Al0.3Ga0.7As MQW's that are photoexcited by interband radiation. A comprehensive study of the photoinduced absorption (PIA) strength as a function of exciting (laser) intensity and modulation frequency indicates that only a subgroup of the photoexcited electrons contribute to the PIA. These electrons are long lived in MQW's with a 2DEG density in the range of 1-3 x 10(10) cm-2. The existence of long lived electrons is explained by a model based on localized, photoexcited holes, that have a reduced radiative recombination rate with the 2DEG. We calculate this recombination rate and show that it is much longer than that of free electrons and holes.
引用
收藏
页码：1199 / 1202
页数：4
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