INTERFACE STATE MEASUREMENTS BY THE DLS-82E LOCK-IN SPECTROMETER

被引:5
|
作者
DMOWSKI, K [1 ]
VUILLAUME, D [1 ]
LEPLEY, B [1 ]
LOSSON, E [1 ]
BATH, A [1 ]
机构
[1] UNIV METZ SUPELEC,CTR LORRAIN OPT & ELECTR SOLIDES,INTERFACES COMPOSANTS & MICROELECTR LAB,F-57078 METZ 3,FRANCE
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 1995年 / 66卷 / 08期
关键词
D O I
10.1063/1.1145383
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A calculation procedure to determine the energy distribution of interface states from the deep level transient spectroscopy spectrum measured in metal-insulator-semiconductor structures by means of the DLS-82E lock-in spectrometer is described. Interface states in metal-boron nitride-WP and metal-oxide-Si capacitors have been examined by the DLS-82E spectrometer to demonstrate the practical application of the proposed procedure. (C) 1995 American Institute of Physics.
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页码:4283 / 4288
页数:6
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