COMPOUND CAVITY GAIN OF TANDEM-ELECTRODE MULTIPLE-QUANTUM-WELL ALGAAS LASER-DIODES

被引：2
|
作者：
KNOP, W [1 ]
HARDER, C [1 ]
BACHTOLD, W [1 ]
机构：
[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 03期
关键词：
D O I：
10.1109/68.275482
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The compound cavity gain of multiple-quantum-well AlGaAs semiconductor lasers with segmented contacts was measured in detail. A second peak of the gain curve is observed. We discuss the impact of the individual features of gain and absorption on the characteristics of the laser diode and demonstrate that, by changing the bias conditions, these features can be used to produce spectral switching of the lasing wavelength by more than 10 nm.
引用
收藏
页码：338 / 340
页数：3
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