MOLECULAR-BEAM EPITAXY OF IV-VI COMPOUND HETEROJUNCTIONS AND SUPERLATTICES

被引：0
|
作者：
PARTIN, DL [1 ]
机构：
[1] GM CORP, RES LABS, DEPT PHYS, WARREN, MI 48090 USA
来源：
SEMICONDUCTORS AND SEMIMETALS | 1991年 / 33卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：311 / 336
页数：26
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