共 50 条
- [1] SATURATION OF INTERVALENCE-BAND TRANSITION IN P-TYPE GERMANIUM. Hongwai Yanjiu, A-ji/Chinese Journal of Infrared Research A, 1986, 5 A (06): : 417 - 423
- [2] RELAXATION DYNAMICS AND PHOTOCONDUCTIVITY IN P-TYPE GERMANIUM ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1979, 32 (04): : 347 - 354
- [4] IMPURITY PHOTOCONDUCTIVITY IN P-TYPE GERMANIUM CONTAINING BERYLLIUM SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 1010 - +
- [5] SATURATION OF INTERVALENCE-BAND TRANSITIONS IN P-TYPE SEMICONDUCTORS PHYSICAL REVIEW B, 1980, 21 (08): : 3502 - 3512
- [6] FIELD DEPENDENDENCES OF OSCILLATIONS OF IMPURITY PHOTOCONDUCTIVITY OF P-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 380 - +
- [8] ANISOTROPY OF CONDUCTIVITY DUE TO WARM HOLES IN P-TYPE GERMANIUM AND P-TYPE SILICON ZEITSCHRIFT FUR PHYSIK, 1968, 212 (02): : 183 - +
- [10] Slow photoconductivity relaxation due to radiation defects in p-type Si Semiconductors, 1999, 33 : 529 - 530