NON STEADY-STATE CARRIER TRANSPORT IN SEMICONDUCTOR, APPLICATION TO THE MODELING OF SUB-MICRON DEVICES

被引：6
|
作者：
CONSTANT, E [1 ]
BOITTIAUX, B [1 ]
机构：
[1] CTR HYPERFREQUENCES & SEMICOND,CNRS,LAB 287,GRECO MICROONDE 11,F-59655 VILLENEUVE DASCQ,FRANCE
来源：
JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC7期
关键词：
D O I：
10.1051/jphyscol:1981708
中图分类号：
学科分类号：
摘要：
引用
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页码：73 / 94
页数：22
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