DIRECT MEASUREMENTS OF LATTICE-PARAMETER VARIATIONS AND RELAXATION KINETICS IN STRAINED SI1-XGEX/SI HETEROSTRUCTURES

被引：4
|
作者：
SARDELA, MR
HANSSON, GV
机构：
[1] Department of Physics, Linköping University
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期
关键词：
D O I：
10.1063/1.112009
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lattice parameter variations in strained Si1-xGex/Ge (x<0.23) induced by high-temperature annealing in the range 700-1000-degrees-C, were determined by x-ray high-resolution reciprocal lattice mapping of the crystal structure. In the range 700-800-degrees-C, the strain relaxation was found to increase by one order of magnitude owing to glide propagation of misfit dislocations, with an activation energy of 2.3 eV In the range 850-1000-degrees-C, relaxation was still high but the increase with the temperature was limited by dislocation interactions.
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页码：1442 / 1444
页数：3
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