共 50 条
- [1] INFLUENCE OF PRESSURE ON THE KONDO EFFECT IN TELLURIUM-DOPED GALLIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1067 - 1068
- [2] NEGATIVE MAGNETORESISTANCE OF TELLURIUM-DOPED GALLIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 461 - 462
- [3] INVESTIGATION OF GALLIUM ANTIMONIDE UNDER HYDROSTATIC-PRESSURE CONDITIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 850 - 851
- [4] Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt Semiconductors, 1997, 31 : 806 - 808
- [7] CHARACTERISTICS OF PHOTOCONDUCTIVITY OF TELLURIUM-DOPED CADMIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 705 - 706
- [8] SUBMILLIMETER MAGNETOSPECTROSCOPY OF TELLURIUM UNDER HYDROSTATIC-PRESSURE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 147 (01): : 297 - 306
- [9] ON SILICON-DOPED GALLIUM-ARSENIDE UNDER HYDROSTATIC-PRESSURE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 181 (02): : K45 - K48
- [10] PHOTOLUMINESCENCE OF GALLIUM ANTIMONIDE DOPED WITH TELLURIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (04): : 550 - +