MBE-GROWN INGAALAS 1.5-MU-M MQW RIDGE-WAVE-GUIDE LASER-DIODES WITH ALAS ETCH STOP LAYERS

被引：4

作者：

CHOI, WY

BROEKAERT, TPE

FONSTAD, CG

机构：

[1] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 05期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19930323

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAlAs materials lattice-matched to InP. A 3 nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

引用

页码：483 / 485

页数：3

共 12 条

[1] 1.5-MU-M MULTIPLE-QUANTUM-WELL DISTRIBUTED FEEDBACK LASER-DIODES GROWN ON CORRUGATED INP BY MOVPE
KITAMURA, M
TAKANO, S
SASAKI, T
HENMI, N
YAMADA, H
SHINOHARA, Y
HASUMI, H
MITO, I
ELECTRONICS LETTERS, 1988, 24 (16) : 1045 - 1046
[2] 22 GHZ-BANDWIDTH 1.5 MU-M COMPRESSIVELY STRAINED INGAASP MQW RIDGE-WAVE-GUIDE DFB LASERS
WRIGHT, AP
BRIGGS, ATR
SMITH, AD
BAULCOMB, RS
WARBRICK, KJ
ELECTRONICS LETTERS, 1993, 29 (21) : 1848 - 1849
[3] EXTREMELY LOW THRESHOLD CURRENT OPERATION IN 1.5-MU-M MQW-DFB LASER-DIODES WITH SEMI-INSULATING INP CURRENT BLOCKING REGION
SASAKI, T
YAMAZAKI, H
HENMI, N
YAMADA, H
YAMAGUCHI, M
KITAMURA, M
MITO, I
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1990, 8 (09) : 1343 - 1349
[4] BURIED-OXIDE RIDGE-WAVE-GUIDE INALAS-INP-INGAASP (LAMBDA-SIMILAR-TO-1.3-MU-M) QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES
KRAMES, MR
HOLONYAK, N
EPLER, JE
SCHWEIZER, HP
APPLIED PHYSICS LETTERS, 1994, 64 (21) : 2821 - 2823
[5] RIDGE WAVE-GUIDE DFB LASER OPERATING AT LAMBDA = 1.5-MU-M, FABRICATED IN A SINGLE STEP EPITAXIAL-GROWTH
BINSMA, JJM
TIEMEYER, LF
VANZANTVOORT, HACM
BAELE, I
VANDONGEN, T
VANDERHOFSTAD, GLA
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2354 - L2356
[6] 1.5-MU-M GAINAS/GAINASP GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE MULTIPLE QUANTUM WELL (GRIN-SCH-MQW) LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
KASUKAWA, A
MURGATROYD, IJ
IMAJO, Y
NAMEGAYA, T
OKAMOTO, H
KASHIWA, S
ELECTRONICS LETTERS, 1989, 25 (10) : 659 - 661
[7] VERY LOW THRESHOLD 1.5-MU-M GAINAS/ALGAINAS BH GRINSCH STRAINED-LAYER QUANTUM-WELL LASER-DIODES GROWN BY MOCVD
KASUKAWA, A
BHAT, R
CANEAU, C
ANDREADAKIS, N
PATHAK, B
ZAH, CE
KOZA, MA
LEE, TP
ELECTRONICS LETTERS, 1991, 27 (18) : 1676 - 1678
[8] SPECTRAL LINEWIDTH REDUCTION IN METALORGANIC VAPOR-PHASE EPITAXY GROWN 1.5-MU-M SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM WELL DISTRIBUTED FEEDBACK LASER-DIODES
TAKANO, S
SASAKI, T
YAMADA, H
KITAMURA, M
MITO, I
APPLIED PHYSICS LETTERS, 1988, 53 (21) : 2019 - 2020
[9] 1.57-MU-M STRAINED-LAYER QUANTUM-WELL GAINALAS RIDGE-WAVE-GUIDE LASER-DIODES WITH HIGH-TEMPERATURE (130-DEGREES-C) AND ULTRAHIGHSPEED (17 GHZ) PERFORMANCE
STEGMULLER, B
BORCHERT, B
GESSNER, R
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) : 597 - 599
[10] 1.5-MU-M GAINAS/ALGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE QUANTUM-WELL LASER-DIODES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
KASUKAWA, A
BHAT, R
CANEAU, C
ANDREADAKIS, NC
PATHAK, B
ZAH, CE
KOZA, MA
LEE, TP
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1365 - 1371

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