MESFET-LIKE TRANSFERRED-ELECTRON DEVICES IN IN0.53GA0.47AS

被引：1
|
作者：
HAHN, D
ZWINGE, G
SCHLACHETZKI, A
机构：
[1] Institut für Halbleitertechnik, Technical University Braunschweig
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 13期
关键词：
SEMICONDUCTOR DEVICES;
D O I：
10.1049/el:19930776
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In0.53Ga0.47As transferred-electron devices with Schottky-gate electrodes were fabricated. These devices can be used in optoelectronic circuits on InP or as millimetre wave oscillators. For the realisation of the gate electrode several enhancement layers were tested to increase the Schottky barrier height on In0.53Ga0.47As. The triggering of single dipole domains in the device was demonstrated.
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页码：1160 / 1162
页数：3
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