CHARACTERIZATION OF THE ANODIC INP-OXIDE INTERFACE VIA A NEW TECHNIQUE MEASURING TRANSIENT CHARGES

被引：0
|
作者：
GARRIGUES, M
ZENCIRCI, N
MAHDJOUB, A
机构：
来源：
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1988年 / 43卷 / 241期
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：271 / 272
页数：2
相关论文
共 50 条
  • [1] THE DISTRIBUTION OF TRAPPING STATES AT THE AL/INP-OXIDE INTERFACE
    ALREFAIE, SN
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (02): : 213 - 217
  • [2] AUGER ANALYSIS OF ANODIC OXIDE INP INTERFACE
    WILMSEN, CW
    KEE, RW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 953 - 956
  • [3] ANODIC OXIDE-GAAS AND INP INTERFACE FORMATION
    GEIB, KM
    WILMSEN, CW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 952 - 957
  • [4] Improved electrical properties on the anodic oxide InP interface for MOS structures
    Sumathi, RR
    Dharmarasu, N
    Arulkumaran, S
    Jayavel, P
    Kumar, J
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (12) : 1358 - 1361
  • [5] Improved electrical properties on the anodic oxide/InP interface for MOS structures
    R. R. Sumathi
    N. Dharmarasu
    S. Arulkumaran
    P. Jayavel
    J. Kumar
    Journal of Electronic Materials, 1998, 27 : 1358 - 1361
  • [6] NEW TECHNIQUE FOR MEASURING DUCTILITY OF ANODIC FILMS
    ESCALANT.E
    KRUGER, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : C210 - &
  • [7] Investigations on the CdS passivated anodic oxide-InP interface for MOS structures
    Sumathi, RR
    Kumar, MS
    Dharmarasu, N
    Kumar, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 60 (01): : 25 - 30
  • [8] Investigations on the CdS passivated anodic oxide-InP interface for MOS structures
    Crystal Growth Centre, Anna University, -600 025, Chennai, India
    Mater Sci Eng B Solid State Adv Technol, 1 (25-30):
  • [9] Study of the traps at a mercury cadmium telluride-anodic oxide interface using a transient photoconductive decay technique
    Gopal, V
    Devi, N
    Pal, R
    Kumar, V
    JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) : 530 - 536
  • [10] CHARACTERIZATION OF OXIDE-NITRIDE INTERFACE CHARGES IN MNOS DEVICES
    RAJKANAN, K
    MULTANI, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1152 - 1155
12345