A METHOD FOR FINDING BOUNDS ON ALL THE DC SOLUTIONS OF TRANSISTOR-CIRCUITS

In this paper a new effective method is developed for finding bounds on the location of all the dc solutions of the circuits containing Ebers-Moll modeled transistors and diodes. The circuit is represented by algebraic equations consisting of linear and nonlinear (exponential type) parts. The method leads to the process of successive contraction of a region including all the solutions. The crucial point of the method is weakening the nonlinearities using a real parameter which can be generally optimized. In this way it follows a very simple computation process rapidly convergent to the bounds on the solutions. An effective implementation or the method is described and numerical examples are given.