LATTICE CONSTANTS AND THERMAL EXPANSION OF SILICON UP TO 900-DEGREES-C BY X-RAY METHOD

被引：44
作者：
DUTTA, BN
机构：
来源：
PHYSICA STATUS SOLIDI | 1962年 / 2卷 / 08期
关键词：
D O I：
10.1002/pssb.19620020803
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：984 / 987
页数：4
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