4.3-TERAHERTZ 4-WAVE-MIXING SPECTROSCOPY OF INGAASP SEMICONDUCTOR AMPLIFIERS

被引：41
|
作者：
DOTTAVI, A [1 ]
IANNONE, E [1 ]
MECOZZI, A [1 ]
SCOTTI, S [1 ]
SPANO, P [1 ]
DALLARA, R [1 ]
GUEKOS, G [1 ]
ECKNER, J [1 ]
机构：
[1] ETH ZURICH,INST QUANTUM ELECTR,CH-8093 ZURICH,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 21期
关键词：
D O I：
10.1063/1.112586
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A four-wave mixing experiment in a bulk InGaAsP traveling-wave semiconductor amplifier is reported. The maximum pump-probe detuning is 4.3 THz. The equivalent time resolution of 37 fs is high enough to measure with good accuracy the time constant of spectral-hole burning (100 fs in our case). The simultaneous presence of spectral-hole burning and of an instantaneous, within our time resolution, saturation process is clearly displayed.
引用
收藏
页码：2633 / 2635
页数：3
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