PHOTOTUNNEL CONDUCTANCE EFFECT IN GAAS PARA AND MIS JUNCTIONS

被引：5

|

作者：

NISHIZAWA, J ^{[1
]}

KIMURA, M ^{[1
]}

机构：

[1] TOHOKU UNIV, RES INST ELECT COMMUN, SENDAI, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.1662020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4683 / 4691

页数：9

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