ANOMALOUS INCREASE OF RESIDUAL STRAINS ACCOMPANIED WITH SLIP GENERATION BY THERMAL ANNEALING OF LEC-GROWN GAAS WAFERS

Quantitative characterization of residual strains in commercial 3''- diameter LEC-grown wafers with standard dimensions has been made before and after thermal annealing (20 min at 800 degrees C in AsH3(2 Torr)+Ar/N-2 atmosphere). It was sometimes observed that slip lines were generated along the (011) in the peripheral region of (100) wafers by the thermal annealing. There was found an anomalous increase of residual strains accompanied with the slip generation. It was discussed on the origins of slip generation and on the anomalous increase of residual strains found here.