DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY OF HOLE TRAPS IN P-TYPE CDTE

被引：4
|
作者：
SZATKOWSKI, J
PLACZEKPOPKO, E
HAJDUSIANEK, A
机构：
[1] Inst. of Phys., Tech. Univ. Wroclaw
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1994年 / 6卷 / 39期
关键词：
Crystal defects - Crystal lattices - Crystal orientation - Electronic properties - Energy gap - Entropy - Spectroscopic analysis - Surfaces;
D O I：
10.1088/0953-8984/6/39/014
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The presence of hole traps in p-type CdTe has been studied by deep-level transient spectroscopy. Two hole traps labelled H1 and H2 with activation enthalpies of 0.26 eV and 0.61 eV have been detected. Both traps act as donor point detects with entropies of 2.4 x 10(-4) eV K-1 for H1 and 8.5 x 10(-4) eV K-1 for H2. The capture cross-sections are found to be temperature independent sigma(pH1) congruent-to 3 x 10(-18) cm2 and sigma(pH2) congruent-to 1.2 x 10(-17) cm2. The concentration of detects H1 has its maximum (equal to about 1 x 10(13) cm-3) close to the surface whereas the defects H2 seem to be located at around 0.5 mum distance from the surface (with a concentration of 2 x 10(12) cm-3).
引用
收藏
页码：7935 / 7940
页数：6
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