GROWTH AND SILICON DOPING OF ALXGA1-XP ON GAP BY GAS SOURCE MOLECULAR-BEAM EPITAXY

Using PH3 as the gas source and elemental Al and Ga, AlxGa1 - xP on (100) orientation GaP has been grown by gas source molecular beam epitaxy (GSMBE). In situ RHEED analysis indicates the growth of good quality single crystal epitaxial AlxGa1 - xP can be achieved for all Al mole fractions ranging between 0 and 1. Using elemental silicon as the dopant source, free electron carrier concentrations as high as 8×1018 cm-3 for GaP and 6×1018 cm-3 for Al0.35Ga0.65P have also been achieved with no observable saturation effects, which indicates higher carrier concentrations are obtainable. © 1990.