A simple model for diffusion-induced dislocations during the lithiation of crystalline materials

被引:4
|
作者
Yang, Fuqian [1 ]
机构
[1] Univ Kentucky, Dept Chem & Mat Engn, Mat Program, Lexington, KY 40506 USA
关键词
diffusion; misfit strain; dislocation density; lithiation;
D O I
10.1063/2.1405101
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
Assuming that the lithiation reaction occurs randomly in individual small particles in the vicinity of the reaction front, a simple model of diffusioninduced dislocations was developed. The diffusion-induced dislocations are controlled by the misfit strain created by the diffusion of solute atoms or the phase transformation in the vicinity of the reaction front. The dislocation density is proportional to the total surface area of the "lithiated particle" and inversely proportional to the particle volume. The diffusion-induced dislocations relieve the diffusion-induced stresses. (C) 2014 The Chinese Society of Theoretical and Applied Mechanics.
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收藏
页数:4
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