FAST TRANSIENT CAPACITANCE MEASUREMENTS FOR IMPLANTED DEEP LEVELS IN SILICON

被引：26
|
作者：
NAGASAWA, K [1 ]
SCHULZ, M [1 ]
机构：
[1] FRAUNHOFER GESELL,INST ANGEW FESTKORPER PHYS,ECKER STR 4,D-78 FREIBURG,FED REP GER
来源：
APPLIED PHYSICS | 1975年 / 8卷 / 01期
关键词：
D O I：
10.1007/BF00883667
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：35 / 42
页数：8
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