PLASMA-INDUCED GATE-OXIDE CHARGING ISSUES FOR SUB-0.5 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES

被引：14
|
作者：
STAMPER, AK
LASKY, JB
ADKISSON, JW
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期
关键词：
D O I：
10.1116/1.579850
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：905 / 911
页数：7
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