AB-INITIO CALCULATIONS ON SILICON-CONTAINING CONJUGATED POLYMERS

被引:0
|
作者
BAKHSHI, AK
机构
[1] Department of Chemistry, Panjab University, Chandigarh
关键词
D O I
10.1016/0038-1098(93)90233-D
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The energy band structures of silicon containing polymers with unsaturated bonds such as polysilene (PS), polysemisilene (PSS), polysilacene (PSA) and polysemisilacene (PSSA) have been calculated on the basis of ab initio crystal orbital method using double-zeta basis set. All the silicon containing polymers are found to be less insulating than trans-polyacetylene. The calculated trend in the band gap values is PSA < PS < PSSA < PSS. Our results predict PS to be the strongest candidate for p-doping whereas PSA is predicted to have the greatest capacity for n-doping.
引用
收藏
页码:401 / 403
页数:3
相关论文
共 50 条
  • [1] 'Thermomechanical data for silicon-containing species from Ab initio electronic structure calculations'
    Ho, P.
    Melius, C.F.
    Proceedings - The Electrochemical Society, 1990, 90 (12):
  • [2] NONLINEAR-OPTICAL PROPERTIES OF CONJUGATED POLYMERS FROM AB-INITIO FINITE OLIGOMER CALCULATIONS
    KIRTMAN, B
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 208 : 32 - COMP
  • [3] Ab-initio pseudopotential calculations of boron diffusion in silicon
    Windl, W
    Bunea, M
    Stumpf, R
    Dunham, ST
    Masquelier, MP
    1999 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, 1999, : 369 - 372
  • [4] Ab-initio pseudopotential calculations of boron diffusion in silicon
    Windl, W
    Bunea, MM
    Stumpf, R
    Dunham, ST
    Masquelier, MP
    SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 91 - 96
  • [5] Diffusion in silicon and the predictive power of ab-initio calculations
    Windl, W
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (10): : 2313 - 2318
  • [6] Ab-initio pseudopotential calculations of boron diffusion in silicon
    Computational Materials Group, Motorola, Inc., M.S. B285, Los Alamos, NM 87545, United States
    不详
    不详
    Mater Res Soc Symp Proc, (91-96):
  • [7] Ab-initio pseudopotential calculations of phosphorus diffusion in silicon
    Liu, XY
    Windl, W
    Masquelier, MP
    SILICON FRONT-END JUNCTION FORMATION TECHNOLOGIES, 2002, 717 : 181 - 186
  • [8] CHEMICAL-SHIFT ANISOTROPIES IN SILICON-CONTAINING 3-MEMBERED RINGS - AN AB-INITIO STUDY
    MAGYARFALVI, G
    PULAY, P
    CHEMICAL PHYSICS LETTERS, 1995, 241 (04) : 393 - 398
  • [9] AB-INITIO CALCULATIONS ON PORPHIN
    ALMLOF, J
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1974, 8 (06) : 915 - 924
  • [10] ACETONE, AB-INITIO CALCULATIONS
    ALLINGER, NL
    HICKEY, MJ
    TETRAHEDRON, 1972, 28 (08) : 2157 - &