PASSIVITY DURING THE OXIDATION OF SILICON AT ELEVATED TEMPERATURES

被引：279
作者：
WAGNER, C
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1958年 / 29卷 / 09期
关键词：
D O I：
10.1063/1.1723429
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1295 / 1297
页数：3
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