PROTON ISOLATION OF SI DELTA-DOPED GAAS

被引：1
|
作者：
BILLEN, K
KELLY, MJ
LANCEFIELD, D
GWILLIAM, RM
RTICHIE, DA
GYMER, S
JONES, GAC
LINFIELD, EH
CHURCHILL, AP
机构：
[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
[2] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 16期
关键词：
ION IMPLANTATION; GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;
D O I：
10.1049/el:19940832
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The use of proton isolation to define Si delta-doped GaAs device structures is reported and was found to be effective in defining delta-doped layers with a two-dimensional electron density of up to 6.8 X 10(12) cm-2. Qualitatively the electron transport characteristics of the proton-isolated devices were identical to those of equivalent mesa-etched devices.
引用
收藏
页码：1359 / 1360
页数：2
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