ON THE THEORY OF THE THERMOELECTRICITY IN 2-BAND SEMICONDUCTORS

被引：5

|

作者：

HAGA, E

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1959年 / 14卷 / 01期

关键词：

D O I：

10.1143/JPSJ.14.35

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：35 / 38

页数：4

相关论文

共 50 条

[1] THERMOELECTRIC FIGURE OF MERIT OF 2-BAND SEMICONDUCTORS
SIMON, R
JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1830 - &
[2] THEORY OF OPTICAL-ABSORPTION IN DISORDERED SEMICONDUCTORS DESCRIBED BY 2-BAND MODEL
FEDIRKO, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 995 - 997
[3] MULTIPHOTON INTRINSIC PHOTOEFFECT IN 2-BAND SEMICONDUCTORS
ZARETSKY, DF
YUDKEVICH, MM
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1991, 99 (01): : 260 - 267
[4] COMPONENTS OF 2-BAND RESISTIVITY TENSOR IN SEMICONDUCTORS
MOORE, RG
JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1545 - &
[5] DISORDER IN 2-BAND MODELS FOR AMORPHOUS-SEMICONDUCTORS
MONTGOMERY, CG
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 459 - 459
[6] TRANSVERSE ULTRASONIC-ABSORPTION IN 2-BAND SEMICONDUCTORS
FALKO, II
PHYSICS OF METALS AND METALLOGRAPHY-USSR, 1971, 31 (03): : 1 - &
[7] THEORY OF TRANSPORT EFFECTS IN SEMICONDUCTORS - THERMOELECTRICITY
PRICE, PJ
PHYSICAL REVIEW, 1956, 104 (05): : 1223 - 1239
[8] HALL CONDUCTIVITY AND LORENTZ FORCE LAW FOR 2-BAND SEMICONDUCTORS
MITCHELL, DL
PHYSICAL REVIEW B, 1986, 33 (06): : 4021 - 4026
[9] CORRELATED DISORDER IN 2-BAND MODELS FOR AMORPHOUS-SEMICONDUCTORS
MONTGOMERY, CG
PHYSICAL REVIEW B, 1985, 31 (10): : 6525 - 6530
[10] THE EFFECT OF NONPARABOLICITY ON THE THERMOELECTRIC FIGURE OF MERIT OF 2-BAND SEMICONDUCTORS
DILLNER, U
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (01): : K77 - K79

← 1 2 3 4 5 →