OXIDATION OF AMORPHOUS AND CRYSTALLINE SILICON

被引：9
|
作者：
SZEKERES, A
DANESH, P
机构：
[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, 1784
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00109-3
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The oxidation of c-Si and a-Si:H in dry O-2 and in H2O steam at temperatures ranging from 800 to 1060 degrees C is studied. it is shown that the oxide grows on a-Si:H film linearly with time, while its growth on c-Si obeys the linear-parabolic law. The nature and magnitude of the oxide stress depend on the oxidizing material and the oxidation conditions. It is suggested that the observed oxide stress behavior is related to the different types of hydrogenous species and to the difference in the structure of the oxidizing material.
引用
收藏
页码：45 / 48
页数：4
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