ELECTRONIC CHARACTERIZATION OF INDIUM TIN OXIDE-SILICON PHOTO-DIODES

被引：44

|

作者：

CHANG, NS

SITES, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 09期

关键词：

D O I：

10.1063/1.325513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4833 / 4837

页数：5

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