SUPERCONDUCTING PROPERTIES AND STRUCTURE OF REACTIVELY SPUTTERED NIOBIUM CARBIDE THIN-FILMS

被引：6

作者：

SPITZER, HJ ^{[1
]}

机构：

[1] USA,MOBIL EQUIPMENT RES & DEV CTR,FT BELVOIR,VA 22060

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 01期

关键词：

D O I：

10.1116/1.1317942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：20 / 21

页数：2

共 50 条

[1] SUPERCONDUCTING AND METALLURGICAL PROPERTIES OF NIOBIUM CARBONITRIDE REACTIVELY SPUTTERED THIN-FILMS
FRANCAVILLA, TL
WOLF, SA
GUBSER, DU
SINGER, IL
SKELTON, EF
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 386 - 386
[2] RELATIONSHIP BETWEEN SUBSTRATE TEMPERATURE, STRUCTURE, AND SUPERCONDUCTING PROPERTIES OF REACTIVELY SPUTTERED NIOBIUM NITRIDE THIN-FILMS
SPITZER, HJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 333 - &
[3] SUPERCONDUCTING PROPERTIES OF REACTIVELY SPUTTERED NBCN THIN-FILMS
FRANCAVILLA, TL
WOLF, SA
SKELTON, EF
IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) : 569 - 572
[4] SUPERCONDUCTING PROPERTIES OF REACTIVELY SPUTTERED NIOBIUM NITRIDE THIN FILMS
TOTH, LE
AMERICAN CERAMIC SOCIETY BULLETIN, 1968, 47 (08): : 759 - &
[5] REACTIVELY SPUTTERED TITANIUM CARBIDE THIN-FILMS - PREPARATION AND PROPERTIES
EIZENBERG, M
MURARKA, SP
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3190 - 3194
[6] REACTIVELY SPUTTERED TIXC THIN-FILMS - PREPARATION AND PROPERTIES
EIZENBERG, M
MURARKA, SP
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C102 - C102
[7] CRYSTAL-STRUCTURES AND SUPERCONDUCTING TRANSITION-TEMPERATURES OF REACTIVELY SPUTTERED TUNGSTEN CARBIDE THIN-FILMS
KILBANE, FM
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 149 - 149
[8] PROPERTIES OF REACTIVELY SPUTTERED SUPERCONDUCTING FILMS
GAVALER, JR
IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) : 623 - 624
[9] OPTICAL-PROPERTIES OF DC REACTIVELY SPUTTERED THIN-FILMS
YIN, ZQ
HARDING, GL
THIN SOLID FILMS, 1984, 120 (02) : 81 - 108
[10] RF SUPERCONDUCTING PROPERTIES OF THIN-FILMS ON NIOBIUM
CAMPISI, IE
DERUYTER, H
FARKAS, ZD
GARWIN, EL
HOGG, HA
KING, F
KIRBY, RE
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (04) : 3363 - 3365

← 1 2 3 4 5 →