INSTABILITY OF CURRENT IN N-TYPE NICKEL-DOPED GERMANIUM SUBJECTED TO STRONG ELECTRIC FIELDS

被引：0

作者：

KLIMKA, LA

KALVENAS, SP

POZHELA, YK

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 02期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：343 / &

共 50 条

[1] SURFACE DOMAINS IN NICKEL-DOPED N-TYPE GERMANIUM IN STRONG ELECTRIC-FIELDS
KALVENAS, SP
SHEIKIS, LS
PUCHINSK.AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 998 - +
[2] SURFACE DOMAINS IN NICKEL-DOPED n-TYPE GERMANIUM IN STRONG ELECTRIC FIELDS.
Kal'venas, S.P.
Sheikis, L.S.
Puchinskas, A.A.
1972, 6 (06): : 998 - 1000
[3] CURRENT INSTABILITY IN N-TYPE GERMANIUM IN CROSSED ELECTRIC AND MAGNETIC FIELDS
LYUZE, LL
ZAVYALOV, AV
KARLOVA, GF
SOVIET PHYSICS SOLID STATE,USSR, 1969, 10 (09): : 2195 - &
[4] LOCAL NEGATIVE PHOTOCONDUCTIVITY OF NICKEL-DOPED GERMANIUM IN STRONG ELECTRIC-FIELDS
KALVENAS, SP
SHEIKIS, LS
PUCHINSKAS, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1384 - 1386
[5] INSTABILITY OF INJECTED CARRIERS IN N-TYPE GE SUBJECTED TO STRONG ELECTRIC-FIELDS
ALIEV, KM
ISMAILOV, ZA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1495 - 1495
[6] TRANSVERSE MAGNETORESISTANCE OF N-TYPE GERMANIUM IN STRONG ELECTRIC FIELDS
MOVCHAN, EA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (04): : 420 - &
[7] QUASISURFACE CONDUCTANCE OF NICKEL-COMPENSATED N-TYPE GERMANIUM IN STRONG ELECTRIC-FIELDS
KALVENAS, SP
SHEIKIS, LS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 380 - 383
[8] PREPARATION OF CONTACTS ON N-TYPE GERMANIUM THAT ARE NEUTRAL IN STRONG ELECTRIC FIELDS
MOVCHAN, EA
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1967, (06): : 1457 - &
[9] HEATING OF ELECTRONS IN STRONG CONSTANT ELECTRIC FIELDS AT SURFACE OF N-TYPE GERMANIUM
KALVENAS, SP
BARAVIKA.VV
POZHELA, YK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (10): : 1249 - +
[10] A NEW CURRENT INSTABILITY IN N-TYPE GERMANIUM
MCGRADDY, JC
NATHAN, MI
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (03) : 337 - &

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