RELIABILITY ISSUES IN SUBMICRON MOSFETS WITH OXYNITRIDE GATE DIELECTRICS

被引：0
|
作者：
JOSHI, AB
KWONG, DL
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin
来源：
MICROELECTRONICS AND RELIABILITY | 1993年 / 33卷 / 11-12期
关键词：
D O I：
10.1016/0026-2714(93)90090-L
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A review of critical reliability issues in submicron MOSFETs with oxynitride gate dielectrics is presented. We have focussed our attention on: substrate and gate currents in short channel MOSFETs, hot carrier induced MOSFET degradation under DC and AC stress, gate-induced drain leakage current and its enhancement due to stress, neutral trap generation due to electrical stress and degradation of analog MOSFET parameters. We have also discussed the problems of radiation induced neutral trap generation and boron penetration through the gate dielectric, which arise due to the advanced processing techniques utilized in submicron MOSFET processing. It is concluded that the use of oxynitride gate dielectrics can effectively solve several reliability issues encountered in scaling down MOSFETs to submicron dimensions.
引用
收藏
页码：1845 / 1866
页数：22
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