PROCESS-INDUCED DEGRADATION OF THIN GATE OXIDES

被引：0
|
作者：
WONG, CY [1 ]
NGUYEN, TN [1 ]
TAUR, Y [1 ]
ZICHERMAN, DS [1 ]
QUINLAN, D [1 ]
MOY, D [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C118 / C118
页数：1
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