CHARACTERISTICS OF TOP-SURFACE-EMITTING GAAS QUANTUM-WELL LASERS

被引：29
|
作者：
LEE, YH [1 ]
TELL, B [1 ]
BROWNGOEBELER, K [1 ]
JEWELL, JL [1 ]
BURRUS, CA [1 ]
HOVE, JMV [1 ]
机构：
[1] APA OPT INC,BLAINE,MN 55434
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 09期
关键词：
D O I：
10.1109/68.59351
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-aligned, top-surface-emitting, vertical-cavity, GaAs four-quantum-well lasers emitting at 850 nm are made with good room temperature cw characteristics. Deep buried damaged layers by proton implantation are used to control vertical conductivity profiles for efficient current injection at the active region. Minimum cw threshold current is 1.8 mA. Maximum CW output power is 1.5 mW. Laser linewidth of 0.02 Å is measured using a scanning Fabry-Perot etalon. For all sizes of lasers, the full angle beam divergences of fundamental transverse modes are twice as large as those calculated from a diffraction formula using aperture diameters. © 1990 IEEE
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收藏
页码：686 / 688
页数：3
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