CHARACTERIZATION OF MACROSCOPIC DEFECTS IN SILICON AFTER PROCESSING FOR CMOS AND BIPOLAR CIRCUITS

被引：1
|
作者：
STEEDS, JW
JOHNSON, F
SIMPSON, MB
AUGUSTUS, PD
机构：
[1] GEC LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
[2] PLESSEY RES CASWELL LTD,ALLEN CLARK RES CTR,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期
关键词：
D O I：
10.1016/0921-5107(89)90273-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：373 / 376
页数：4
相关论文
共 50 条
  • [1] Characterization of macroscopic defects in silicon after processing for CMOS and bipolar circuits
    Steeds, J.W., 1600, (B4): : 1 - 4
  • [2] CHARACTERIZATION OF DEFECTS IN SILICON BY TRANSMISSION ELECTRON-MICROSCOPY AFTER CMOS AND BIPOLAR PROCESSING
    STEEDS, JW
    JOHNSON, F
    SIMPSON, MB
    AUGUSTUS, PD
    CHARACTERIZATION OF THE STRUCTURE AND CHEMISTRY OF DEFECTS IN MATERIALS, 1989, 138 : 245 - 248
  • [3] CMOS/BIPOLAR CIRCUITS FOR 60-MHZ DIGITAL PROCESSING
    HOTTA, T
    MASUDA, I
    MAEJIMA, H
    UENO, M
    IWAMURA, M
    KURITA, K
    HOTTA, A
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (05) : 808 - 813
  • [4] MACROSCOPIC DEFECTS IN EPITAXIAL SILICON
    SHAW, ER
    BUSEN, KM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (08) : 872 - +
  • [5] MACROSCOPIC DEFECTS IN EPITAXIAL SILICON
    SKAW, ER
    BUSEN, KM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) : C148 - &
  • [6] Correlation between intrinsic stress distribution and crystallographic defects density profile in Czochralski silicon after CMOS processing
    Piotrowski, T
    Jung, W
    SOLID STATE PHENOMENA, 1999, 70 : 519 - 524
  • [7] Testing for floating gates defects in CMOS circuits
    Rafiq, S
    Ivanov, A
    Tabatabaei, S
    Renovell, M
    SEVENTH ASIAN TEST SYMPOSIUM (ATS'98), PROCEEDINGS, 1998, : 228 - 236
  • [8] Test generation for open defects in CMOS circuits
    Devtaprasanna, N.
    Gunda, A.
    Krishnamurthy, P.
    Reddy, S. M.
    Porneranz, I.
    21ST IEEE INTERNATIONAL SYMPOSIUM ON DEFECT AND FAULT-TOLERANCE IN VLSI SYSTEMS, PROCEEDINGS, 2006, : 41 - +
  • [9] ELECTRICAL CHARACTERIZATION OF DEFECTS IN SILICON - GROWTH, PROCESSING, AND CONTAMINATION EFFECTS
    KIMERLING, LC
    JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) : 735 - 735
  • [10] CHARACTERIZATION OF MACROSCOPIC PROPERTIES AND CRYSTALLINE DEFECTS IN NEUTRON-IRRADIATED SILICON-CARBIDE
    YANO, T
    MARUYAMA, T
    ISEKI, T
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1991, 35 (02): : 327 - 338
12345