HEXAGONAL CRYSTALLIZATION IN A 2-DIMENSIONAL ELECTRON-GAS WITH DISORDER

被引:2
|
作者
WULF, U
机构
[1] Technische Universität Cottbus, Fakultät 1, 03013 Cottbus
关键词
D O I
10.1103/PhysRevB.52.12120
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We develop a theory for the solidification of the two-dimensional electron-gas in the presence of disorder. Our mean field theory includes the electron-electron interaction in the Hartree-Fock approximation and the potential of random impurities in the self-consistent Born approximation. It is shown that the electron solid is stable in a wide range of disorder strengths and that the impurity interaction leads to a considerable lowering of the ground-state energy. At low disorder we obtain a Wigner crystal with a gap in the density of states, and at stronger disorder a phase with a nonvanishing density of states is formed. In the presence of disorder there is still a sharp melting transition of the electron solid. Depending on the disorder strength it occurs at a significantly lower temperature. This can explain differences in recent experiments.
引用
收藏
页码:12120 / 12125
页数:6
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