NEW SELF-ELECTRO-OPTIC EFFECT DEVICE USING 2 WAVELENGTHS IN INGAAS/ALGAAS MULTIPLE QUANTUM-WELLS

被引:2
|
作者
GIUGNI, S
KAWASHIMA, K
FUJIWARA, K
SANO, N
机构
[1] ATR OPT & RADIO COMMUN RES LABS,SEIKA,KYOTO 61902,JAPAN
[2] KWANSEI GAKUIN UNIV,SCH SCI,DEPT PHYS,NISHINOMIYA,HYOGO 662,JAPAN
关键词
D O I
10.1063/1.107915
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new self-electro-optic effect device is proposed and demonstrated in an InGaAs/AlGaAs multiple quantum well diode structure by using different wavelengths for the signal and control wavelengths. The single resistor biased device exhibits optical transmission bistability between two stable states of the signal beam at lambda-1 when the control beam power at lambda-2 is varied. The two wavelengths-lambda-1 and lambda-2 may be widely separated so that one is absorbed in the substrate and the other transmitted eliminating the need for substrate removal. The separate wavelengths also eliminate interference effects simplifying the design of vertical device arrays enhancing the possibility of system integration.
引用
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页码:376 / 378
页数:3
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