CARRIER-CONCENTRATION-DEPENDENT SUPERCONDUCTIVITY IN SNTE AND GETE

被引：67

作者：

ALLEN, PB

COHEN, ML

机构：

[1] Department of Physics, University of California, Berkeley

来源：

PHYSICAL REVIEW | 1969年 / 177卷 / 02期

关键词：

D O I：

10.1103/PhysRev.177.704

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theoretical calculation is given of the dependence of the superconducting transition temperature on carrier concentration for the many-valley semiconductors SnTe and GeTe. The model used includes an accurate description of all intravalley processes; however, intravalley interactions alone are inadequate to explain the superconductivity of these materials. This contradicts the results of a recent model calculation of Hulm et al. which involved only intravalley interactions. Intervalley phonon-induced interactions are found to be the dominant mechanism. Good agreement with the available data over the entire range of carrier concentration is found by adjusting a single parameter, the intervalley deformation potential. © 1969 The American Physical Society.

引用

页码：704 / &

共 13 条

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