GALLIUM-ARSENIDE - A NEW MATERIAL TO ACCOMPLISH PASSIVELY MODE-LOCKED ND-YAG LASER

被引：66
|
作者：
ZHANG, ZH
QIAN, LJ
FAN, DY
DENG, XM
机构：
[1] Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, Shanghai 201800
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期
关键词：
D O I：
10.1063/1.106621
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A passively mode-locked Nd:YAG laser using a semi-insulating GaAs is accomplished. Ultrashort pulses, shorter than 10 ps, with an energy of 10-mu-J per pulse are obtained. The dynamics of the pulse formation is described.
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页码：419 / 421
页数：3
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