INFLUENCE OF PRESSURE ON ELECTRONIC CONDUCTION IN TETRAHEDRALLY BONDED AMORPHOUS SEMICONDUCTORS

被引：8

作者：

FUHS, W

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1972年 / 10卷 / 01期

关键词：

D O I：

10.1002/pssa.2210100123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：201 / +

页数：1

共 50 条

[1] THEORY OF DOPING OF AMORPHOUS TETRAHEDRALLY BONDED SEMICONDUCTORS
ROBERTSON, J
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (01): : 31 - 49
[2] Tunneling states in tetrahedrally bonded amorphous semiconductors
Dyrting, S
Fang, HP
Szeto, KY
Sheng, P
EUROPHYSICS LETTERS, 1999, 48 (04): : 403 - 409
[3] SURFACE EFFECTS IN TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
BONNER, JC
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 392 - 392
[4] SIMPLE MODEL OF TETRAHEDRALLY BONDED AMORPHOUS SEMICONDUCTORS.
Henderson, D.
Herman, F.
Ortenburger, I.B.
1973, : 991 - 995
[5] MODELING STRUCTURE OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
CONNELL, GAN
TEMKIN, RJ
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 389 - 389
[6] CLUSTER CALCULATIONS FOR TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
TONG, BY
CHOO, FC
SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 957 - 960
[7] Tetrahedrally bonded amorphous carbon for electronic applications
Milne, WI
PERSPECTIVES, SCIENCE AND TECHNOLOGIES FOR NOVEL SILICON ON INSULATOR DEVICES, 2000, 73 : 85 - 96
[8] Origin of photoluminescence in tetrahedrally-bonded amorphous semiconductors and amorphous chalcogenides
Aoki, Takeshi
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (09): : 1044 - 1052
[9] PHOTOINDUCED MIDGAP ABSORPTION IN TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
OCONNOR, P
TAUC, J
PHYSICAL REVIEW B, 1982, 25 (04): : 2748 - 2766
[10] APPLICATIONS OF THE CPA TO ELEMENTAL TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS
WHITE, CT
CARLOS, WE
SOLID STATE COMMUNICATIONS, 1981, 38 (02) : 147 - 150

← 1 2 3 4 5 →