FABRICATION OF FULLY SCALED 0.5-MU-M N-TYPE METAL-OXIDE SEMICONDUCTOR TEST DEVICES USING SYNCHROTRON X-RAY-LITHOGRAPHY - OVERLAY, RESIST PROCESSES, AND DEVICE FABRICATION

被引：32

作者：

SILVERMAN, JP ^{[1
]}

DIMILIA, V ^{[1
]}

KATCOFF, D ^{[1
]}

KWIETNIAK, K ^{[1
]}

SEEGER, D ^{[1
]}

WANG, LK ^{[1
]}

WARLAUMONT, JM ^{[1
]}

WILSON, AD ^{[1
]}

CROCKATT, D ^{[1
]}

DEVENUTO, R ^{[1
]}

HILL, B ^{[1
]}

HSIA, LC ^{[1
]}

RIPPSTEIN, R ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2147 / 2152

页数：6

共 15 条

[1] FULLY SCALED 0.5 MU-M METAL-OXIDE SEMICONDUCTOR CIRCUITS BY SYNCHROTRON X-RAY-LITHOGRAPHY - MASK FABRICATION AND CHARACTERIZATION
VISWANATHAN, R
ACOSTA, RE
SEEGER, D
VOELKER, H
WILSON, A
BABICH, I
MALDONADO, J
WARLAUMONT, J
VLADIMIRSKY, O
HOHN, F
CROCKATT, D
FAIR, R
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2196 - 2201
[2] FABRICATION OF 0.5 MU-M N-TYPE AND P-TYPE METAL-OXIDE-SEMICONDUCTOR TEST DEVICES USING X-RAY-LITHOGRAPHY
ZWICKER, G
WINDBRACKE, W
BERNT, H
FRIEDRICH, D
HUBER, HL
KRULLMANN, E
PELKA, M
LANGE, P
HEMICKER, P
STAUDTFISCHBACH, P
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1642 - 1647
[3] APPLICATION OF SYNCHROTRON X-RAY-LITHOGRAPHY TO FABRICATE FULLY SCALED 0.5 MU-M COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR-DEVICES AND CIRCUITS
WANG, LK
SILVERMAN, J
SEEGER, D
PETRILLO, E
DIMILIA, V
KATCOFF, D
KWIETNIAK, K
ACOSTA, R
PETRILLO, K
BRODSKY, S
BABICH, I
VLADIMIRSKY, O
VOELKER, H
VISWANATHAN, R
WARLAUMONT, J
WILSON, A
DEVENUTO, R
HILL, B
HSIA, LC
RIPPSTEIN, R
WASIK, C
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1662 - 1666
[4] 0.5-MU-M CMOS DEVICES AND CIRCUITS FABRICATED USING SYNCHROTRON X-RAY-LITHOGRAPHY
WANG, LK
HSU, CH
SEEGER, D
SILVERMAN, J
ZICHERMAN, D
HU, CK
ACOSTA, R
VISWANATHAN, R
WARLAUMONT, J
WILSON, A
1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 11 - 12
[5] SYNCHROTRON RADIATION X-RAY-LITHOGRAPHY FABRICATION OF 0.35 MU-M GATE-LENGTH N-TYPE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
BLACKWELL, RJ
BAKER, JW
WELLS, GM
HANSEN, M
WALLACE, J
CERRINA, F
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (03): : 439 - 445
[6] X-RAY-LITHOGRAPHY APPLIED TO THE FABRICATION OF 1-MU-M N-CHANNEL METAL-OXIDE SEMICONDUCTOR (NMOS) CIRCUITS
FULS, EN
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 333 : 113 - 117
[7] X-RAY-LITHOGRAPHY APPLIED TO THE FABRICATION OF ONE MICROMETER N-CHANNEL METAL-OXIDE SEMICONDUCTOR CIRCUITS
FULS, EN
OPTICAL ENGINEERING, 1983, 22 (02) : 199 - 202
[8] DEGRADATION BEHAVIOR OF 0.5-MU-M PARA-CHANNEL METAL-OXIDE SEMICONDUCTOR TRANSISTORS FABRICATED BY MEANS OF X-RAY AND OPTICAL LITHOGRAPHY
FRIEDRICH, D
BERNT, H
SCHMIDT, L
WINDBRACKE, W
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1638 - 1642
[9] RADIATION-DAMAGE AND ITS EFFECT ON HOT-CARRIER INDUCED INSTABILITY OF 0.5-MU-M CMOS DEVICES PATTERNED USING SYNCHROTRON X-RAY-LITHOGRAPHY
HSU, CCH
WANG, LK
SUN, JYC
WORDEMAN, MR
NING, TH
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 721 - 725
[10] HOT-ELECTRON-INDUCED INSTABILITY IN 0.5-MU-M P-CHANNEL MOSFETS PATTERNED USING SYNCHROTRON X-RAY-LITHOGRAPHY
HSU, CCH
WANG, LK
WORDEMAN, MR
NING, TH
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (07) : 327 - 329

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