A COMPLEMENTARITY OF THE 1/F NOISE AND THE CHARGE-PUMPING METHODS FOR DETERMINATION OF THE DEGRADATION OF THE SMALL SIZE MOS-TRANSISTORS

This paper describes the complementarity of the 1/f noise method and charge-pumping (CP) method for determination of the interface states density in small size MOS transistors, indicating the limitations of the CP method and the possibility of utilizing the 1/f noise method. The theoretical analysis and the experimental results show that both methods are mutually complete. In this manner, they can be useful for estimation of the degradation of the small size MOS transistors in the whole range of the measurement frequency.