OBSERVATION OF SEPARATE ELECTRON AND HOLE ESCAPE RATES IN UNBIASED STRAINED INGAASP MULTIPLE-QUANTUM-WELL LASER STRUCTURES

被引：4

作者：

TAKASAKI, BW ^{[1
]}

PRESTON, JS ^{[1
]}

EVANS, JD ^{[1
]}

SIMMONS, JG ^{[1
]}

PUETZ, N ^{[1
]}

机构：

[1] BELL NO RES LTD,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期

关键词：

D O I：

10.1063/1.109310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the first time-resolved photoconductivity measurements in strained InGaAsP multiple quantum well 1.3 mum laser structures. The photoconductive response is characterized by two exponential time constants, a fast time constant of less than 500 ps and a long time constant between 10 and 20 ns. We attribute these to the escape of electrons and holes from the wells, respectively.

引用

页码：2525 / 2527

页数：3

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