CONTROL OF COMPOSITION PROFILE IN MERCURY CADMIUM TELLURIDE FILMS PREPARED BY ISOTHERMAL VAPOR-PHASE EPITAXY

被引：0

作者：

TAKEUCHI, N ^{[1
]}

KOBAYASHI, H ^{[1
]}

NODA, Y ^{[1
]}

FURUKAWA, Y ^{[1
]}

机构：

[1] TOHOKU UNIV,FAC ENGN,DEPT MAT SCI,SENDAI 98077,JAPAN

来源：

MATERIALS TRANSACTIONS JIM | 1994年 / 35卷 / 05期

关键词：

MERCURY CADMIUM TELLURIDE; ISOTHERMAL VAPOR PHASE EPITAXY; COMPOSITION PROFILE;

D O I：

10.2320/matertrans1989.35.370

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hg1-xCdxTe (MCT) films were grown by using three kinds of source materials on conventional open tube isothermal vapor phase epitaxy. The composition profile was dependent on the source materials: HgTe and sintered MCT sources resulted low x thick film and high x thin film, respectively. By considering these effects, the mixture sources of HgTe and CdTe enabled to produce the films of flat composition profile with x is-approximately-equal-to 0.2 and thickness of 10 mum.

引用

页码：370 / 372

页数：3

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