CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110)

被引：61

作者：

CHADI, DJ

BACHRACH, RZ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1159 / 1163

页数：5

共 25 条

[1] INTERFACE STATES AT GA-GAAS INTERFACE [J].

BACHRACH, RZ ;

BIANCONI, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :525-528

[2] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343

[3]

BACHRACH RZ, UNPUBLISHED

[4]

BACHRACH RZ, 1978, 14TH P INT C PHYS SE, P1073

[5] GE-GAAS(110) INTERFACE FORMATION [J].

BAUER, RS ;

MCMENAMIN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449

[6]

BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[8] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[9] SSRL ULTRAHIGH-VACUUM GRAZING INCIDENCE MONOCHROMATOR - DESIGN CONSIDERATIONS AND OPERATING EXPERIENCE [J].

BROWN, FC ;

BACHRACH, RZ ;

LIEN, N .

NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01) :73-79

[10] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082

← 1 2 3 →